Product Summary

The P2003BDG is an N-Channel Logic Level Enhancement Mode Field Effect Transistor.

Parametrics

P2003BDG absolute maximum ratings: (1)Gate-Source Voltage:±20V; (2)Continuous Drain Current:35A; (3)Pulsed Drain Current:120A; (4)Avalanche Current:15A; (5)Avalanche Energy:15mJ; (6)Repetitive Avalanche Energy:5.6mJ; (7)Power Dissipation:50W; (8)Operating Junction & Storage Temperature Range:-55 to 150℃

Features

P2003BDG features: (1)Drain-Source Breakdown Voltage:25V; (2)Gate Threshold Voltage:1.0V to 3.0V; (3)Gate-Body Leakage:±250nA; (4)Zero Gate Voltage Drain Current:25uA; (5)On-State Drain Current:35A.

Diagrams

P2003BDG package dimensions

P2000
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Soldering Tools 250W/1200 degree 2"D
Data Sheet
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P2000AA61L
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P2000AA61RP
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1-10: $0.92
10-100: $0.82
100-250: $0.80
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P2000Q22CLRP
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Data Sheet
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2910-5000: $0.47
5000-10000: $0.45
P2000SB
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Data Sheet
Negotiable