Product Summary

The M29W040B-90K6 is a 4 Mbit (512Kb×8) Low Voltage Single Supply Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W040B-90K6 is fully backward compatible with the M29W040. The M29W040B-90K6 is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Parametrics

M29W040B-90K6 absolute maximum ratings: (1)TA, Ambient Operating Temperature (Temperature Range Option 1): 0 to 70℃; Ambient Operating Temperature (Temperature Range Option 6): –40 to 85℃; (2)TBIAS, Temperature Under Bias: –50 to 125℃; (3)TSTG, Storage Temperature: –65 to 150℃; (4)VIO, Input or Output Voltage: –0.6 to 4 V; (5)VCC, Supply Voltage: –0.6 to 4 V; (6)VID, Identification Voltage: –0.6 to 13.5 V.

Features

M29W040B-90K6 features: (1)single 2.7 to 3.6V supply voltage for program, erase and read operations; (2)access time: 55ns; (3)programming time: 10μs per Byte typical; (4)8 uniform 64 Kbytes memory blocks; (5)program/erase controller: Embedded Byte Program algorithm; Embedded Multi-Block/Chip Erase algorithm; Status Register Polling and Toggle Bits; (6)erase suspend and resume modes: Read and Program another Block during Erase Suspend; (7)unlock bypass program command: Faster Production/Batch Programming; (8)low power consumption: Standby and Automatic Standby; (9)100,000 program/erase cycles per block; (10)20 years data retention: Defectivity below 1 ppm/year; (11)electronic signature: Manufacturer Code: 20h; Device Code: E3h.

Diagrams

M29W040B-90K6 logic diagram

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