Product Summary

The IRF2807ZPBF is a HEXFET Power MOSFET. This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make the IRF2807ZPBF an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF2807ZPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V (Silicon limited): 89A; (2)Continuous Drain Current, VGS @ 10V:63A; (3)Continuous Drain Current, VGS @ 10V (Package limited):75A; (4)Pulsed Drain Current:350A; (5)Power Dissipation:170W; (6)Linear Derating Factor:1.1W/℃ ; (7)Gate-to-Source Voltage:±20V; (8)Single Pulse Avalanche Energy:160mJ ; (9)Single Pulse Avalanche Energy Tested Value:200mJ; (10)Operating Junction and Storage Temperature Range:-55℃ to +175℃; (11)Soldering Temperature, for 10 seconds:300℃ (1.6mm from case ).

Features

IRF2807ZPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Repetitive Avalanche Allowed up to Tjmax; (7)Lead-Free.

Diagrams

IRF2807ZPBF diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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IRF2807ZPBF
IRF2807ZPBF

International Rectifier

MOSFET MOSFT 75V 89A 9.4mOhm 71nC

Data Sheet

0-1: $1.83
1-25: $1.18
25-100: $0.86
100-250: $0.80
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF200
IRF200

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International Rectifier

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Data Sheet

0-1: $2.23
1-25: $1.52
25-100: $1.13
100-250: $1.08
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Data Sheet

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