Product Summary

The MJD122T4G is a Complementary Darlington Power Transistor. It is designed for general purpose amplifier and low speed switching applications.

Parametrics

MJD122T4G absolute maximum ratings: (1)Collector-Emitter Voltage:100 Vdc; (2)Collector-Base Voltage:100 Vdc; (3)Emitter-Base Voltage:5 Vdc; (4)Collector Current:Continuous:8Adc, Peak:16Adc; (5)Base Current:120 mAdc; (6)Operating and Storage Junction Temperature Range:-65 to +150℃.

Features

MJD122T4G features: (1)Lead Formed for Surface Mount Applications in Plastic Sleeves; (2)Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP127 Series; (3)Monolithic Construction With Built-in Base-Emitter Shunt Resistors; (4)High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc; (5)Epoxy Meets UL 94 V-0 @ 0.125 in; (6)ESD Ratings: Human Body Model, 3B ＞ 8000 V, Machine Model, C ＞400 V; (7)Pb-Free Packages are Available.

Diagrams

MJD122T4G circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJD122T4G
MJD122T4G
ON Semiconductor
Transistors Darlington 8A 100V Bipolar Power NPN
Data Sheet
0-1: $0.34
1-25: $0.30
25-100: $0.22
100-500: $0.18
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJD112
MJD112
ON Semiconductor
Transistors Darlington 2A 100V Bipolar
Data Sheet
Negotiable 
MJD112/L
MJD112/L
Other

Data Sheet
Negotiable 
MJD112-001
MJD112-001
ON Semiconductor
Transistors Darlington 2A 100V Bipolar
Data Sheet
Negotiable 
MJD112-1G
MJD112-1G
ON Semiconductor
Transistors Darlington 2A 100V Bipolar Power NPN
Data Sheet
0-1: $0.32
1-25: $0.28
25-100: $0.21
100-500: $0.18
MJD112G
MJD112G
ON Semiconductor
Transistors Darlington 2A 100V Bipolar Power NPN
Data Sheet
0-1: $0.32
1-25: $0.28
25-100: $0.21
100-500: $0.18
MJD112RL
MJD112RL
ON Semiconductor
Transistors Darlington 2A 100V Bipolar
Data Sheet
Negotiable