(China (Mainland))
Product Summary
The FDS7064SN3 is a high-performance MOSFET .
Parametrics
FDS7064SN3 Parametrics:
Packaging
Tape & Reel (TR)
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
16A (Ta)
Rds On (Max) @ Id, Vgs
8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) @ Vgs
35nC @ 5V
Input Capacitance (Ciss) @ Vds
2800pF @ 15V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package
8-SOIC
Other Names
FDS7064SN3_NL
FDS7064SN3_NLTR
FDS7064SN3_NLTR-ND
FDS7064SN3TR
Features
FDS7064SN3 Features:
? 16 A, 30 V RDS(ON) = 8.0 mΩ @ VGS = 10 V
RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
? High performance trench technology for extremely low RDS(ON)
? No inductance between MOSFET and Schottky
? 40% reduction in Body Diode Forward Voltage
? Optimized to reduce losses in Synchronous Buck Regulators
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS7064SN3 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
FDS7060N7 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
||||
 |
FDS7064A |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
FDS7064N |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
||||
|
FDS7064N7 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
||||
|
FDS7064SN3 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
||||
|
FDS7066ASN3 |
Fairchild Semiconductor |
MOSFET 30V N-Channel PowerTrench |
Data Sheet |
Negotiable |
|
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