(China (Mainland))
Product Summary
This device is designed primarily for low level audio and general purpose applications with high impedance signal sources.
Sourced from Process 89.
Parametrics
2N5461 Parametrics:
Packaging
Bulk
Current - Drain (Idss) @ Vds (Vgs=0)
2mA @ 15V
Drain to Source Voltage (Vdss)
-
Current Drain (Id) - Max
-
FET Type
P-Channel
Voltage - Breakdown (V(BR)GSS)
40V
Voltage - Cutoff (VGS off) @ Id
1V @ 1μA
Input Capacitance (Ciss) @ Vds
7pF @ 15V
Resistance - RDS(On)
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Power - Max
350mW
Features
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2N5461 |
Fairchild Semiconductor |
JFET P-Channel Transistor General Purpose |
Data Sheet |
|
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|
2N5461_D26Z |
Fairchild Semiconductor |
JFET P-Channel Transistor General Purpose |
Data Sheet |
|
|
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|
2N5461_D74Z |
Fairchild Semiconductor |
JFET P-Channel Transistor General Purpose |
Data Sheet |
Negotiable |
|
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|
2N5461_L99Z |
Fairchild Semiconductor |
JFET P-Channel Transistor General Purpose |
Data Sheet |
Negotiable |
|
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|
2N5461_Q |
Fairchild Semiconductor |
JFET P-Channel Transistor General Purpose |
Data Sheet |
Negotiable |
|
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 |
2N5461-E3 |
Vishay/Siliconix |
JFET 40V 2mA |
Data Sheet |
Negotiable |
|
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 |
2N5461G |
ON Semiconductor |
JFET 40V 10mA |
Data Sheet |
Negotiable |
|
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|
2N5461RLRA |
ON Semiconductor |
JFET 40V 10mA |
Data Sheet |
Negotiable |
|
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